It has environmentally friendly modules with easy assemblage, solderfree options, and rohs compliance. Fuji electric igbt white paper download fuji electrics new standard igbt module technology. If the last two figures after hyphen of product name are from 50 through 99, the product is compatible with eu rohs directive. Higher currents in the range of kilo amperes are required in case of high power rated equipments. As a result of the technological developments applied to the new standard module, three conclusions were reached regarding. All applications described in this catalog exemplify the use of fuji s products for your reference only. Igbt gate driver reference design for parallel igbts with. Unit datasheet search, datasheets, datasheet search site.
In response, fuji electric has developed our 7 th generation xseries igbt technology combining enhanced semiconductor chip characteristics and improved packaging structure. For a better understanding it is helpful to read this part along with a datasheet. Reduction of power dissipation chip technology 7th generation xseries igbt power dissipation performance has been improved dramatically. Igbt 6pack page 1 igbt pim page 3 igbt discretes page igbt standard 2pack1pack page 6 igbt high power modules page 7 igbt ipm page 12 igbt modules fuji power semiconductors igbt modules jul. Igbt module, 2mbi200u4b120 datasheet, 2mbi200u4b120 circuit, 2mbi200u4b120 data sheet. The more the igbt cells are provided, the lower onstate voltage the be.
Igbt 7th gen technical documents fuji electric corp. Download fuji igbt modules application manual printable file. Fuji electric 7th generation igbt technology powers todays. Mar 02, 2015 in 2006 fuji electric achieved worldleading level of power loss reduction and downsizing new dual, a new product line of fifth generation fuji igbt modules u4 series. Ever since it commercialized insulated gate bipolar transistor igbt modules in 1988, fuji electric has contributed to miniaturization, cost reduction, and performance improvement of power conversion equipment. Technical documents mt5f14993 quality is our message 1 8 101214161 0 200 400 600 800 1200 1400 1600 150ua120 200ub120 300ud120 i sc a v ge visc fuji igbt modules u series. Photo editing software for fujifilm cameras capture one fujifilm. In addition, we have developed a reverseconducting igbt rcigbt, which integrates an igbt and a fwd into one chip, and in turn the 7thgeneration x series rcigbt module for industrial use that incorporates the chip 34.
Competitive prices from the leading fuji electric intelligent power modules distributor. The planargate punchthrough igbt was the mainstream igbt at that time. The igbt and diode devices of fuji electrics 7thgeneration x series that constitute these modules have been made thinner and miniaturized, thereby optimizing the device structure. Request info find local sales subscribe to mailing list. Buy your vla51701r from an authorized fuji electric distributor. Fuji igbt modules for wind power system fuji solution in gate driver unit gdu fuji solution table of contents. Fuji electric catalog first page, datasheet, datasheet search, data sheet, datasheets, datasheet search site for. Fuji electric has supplied igbts to the market since it commercialized them in 1988. Igbt discrete situated itself as the market leader through groundbreaking innovation and application focus. Unzip the downloaded file and copy to a custom folder. Igbt ipm r series1200v 50a 7 in onepackage7mbp50ra120features temperature protection provided by directly detecting the junctiontemperature of the igbts low power loss and soft switching compatible with existing ipmn series packages high performance and high reliability igbt. To ensure safety, ionmigration on the substrate surface must not degrade. Fuji largecapacity ups highefficiency, full igbt ups7000hxt4 series threephase, fourwire gate city ohsaki, east tower, 112, osaki 1chome, shinagawaku, tokyo 1410032, japan. Igbt 600v75apim, 7mbr75sb060 datasheet, 7mbr75sb060 circuit, 7mbr75sb060 data sheet.
Products category page number of igbt switches internal configuration max v. Fuji, alldatasheet, datasheet, datasheet search site for electronic. Fuji electrics new standard igbt module for evshevs was developed to realize high power density. Fuji power semiconductors igbt modules selection guide 25a1c0003a. View our full product line, datasheets, and resources below. Save on the fullfeature set in capture one pro with this version exclusive to. Igbt discrete is subdivided in discrete igbt with antiparallel diode, discrete igbt without antiparallel diode, 600 v 1200 v ultra soft diode and 650 v rapid 1 and rapid 2 diode. Fuji electric has been developing igbt modules designed to be used as switching elements for power converters of variablespeed drives for motors, uninterruptable power supplies, and more. Fuji electric intelligent power modules element14 singapore.
Evolution of fuji electric igbt technology 1985 1990 1995 2000 2005 2010 trench gate field stop t jmax. We use cookies to optimize and constantly improve our website for you. The planar gate punchthrough igbt was the mainstream igbt at that time. Paralleling igbt modules becomes necessary when the output current requirement cannot be provided by a single igbt module. In response, fuji electric has developed our 7 th generation xseries igbt. Q igbt characteristics fuji igbt modules raynet repair. Fuji electric has been providing igbts to the market since it commercialized them in 1988. Fuji electric 7th generation igbt technology powers today. Fuji electric is a global manufacturer and supplier of igbt modules, inverters, and power semiconductor products for a variety of industrial applications. Prime pack is registered trademark infineon technology ag, germany. Therefore, to satisfy these requirements, the insulated gate bipolar transistor igbt was developed. A single module of an igbt is capable of handling currents up to 600 a in the dual configuration. The dynex manufacturing plant is a vertically integrated facility with device design,wafer fab, packaging, qualification and testing available on site. Compatible with igbt switch modules by fuji electric systems co.
By applying the chip technology of the 7thgeneration x series to optimize the chip structure, we have. Taku takaku senior semiconductor application engineer fuji. Limited warranty fuji makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of others intellectual property rights which may arise from the use of the applications described herein. Fuji electrics igbt module or insulatedgate bipolar transistor is a highperformance 7th generation igbtfwd chipset with a compact design that provides for greater power output. Fuji power semiconductors igbt modules selection guide. Power semiconductors igbt application manuals fuji electric. Igbt 6pack page 1 igbt pim page 3 igbt discretes page igbt standard 2pack1pack page 6 igbt high power modules page 7 igbt ipm page 12 igbt modules fuji power semiconductors igbt. Semiconductors group fuji electric device technology co.
The igbt is a switching device designed to have the highspeed switching performance and gate voltage control of a power mosfet as well as the highvoltage largecurrent handling capacity of a bipolar transistor. Fuji igbt modules application manual february 2004. The punchthrough igbt used the epitaxial sillicon wafer and the minority carriers were highinjected from the collector side to obtain strong. Igbt test procedures fuji igbt modules raynet repair. Fuji electric has also implemented fine pattan silicon process in surface side structures to improve the characteristics of igbt.
Igbt datasheet, igbt pdf, igbt data sheet, datasheet, data sheet, pdf. Fuji power semiconductors igbt modules selection guide 25a1e0003a. The data presented in this manual supersedes all previous specifications. Professional photo editing software and raw converter for fujifilm cameras.
Todays power electronic market is driving development of compact, lowloss, and, highreliability igbt modules to optimize power conversion systems. For further information on cookies please check our data protection declaration. No right or license, either express or implied, under any patent, trade secret or other intellectual property right owned by fuji. Dec 19, 2017 q igbt characteristics tue, 19 dec 2017 fuji igbt modules this section illustrates the characteristics of the new 5th generation igbt modules, using the u series 6mbi100ub120 1200v, 100a as an example. The igbt chip consists of many arranged structures called unit cells. Application note discrete igbt datasheet explanation. This means that an igbt can be switched on and off using voltage signals in the same way as a power mosfet.
The igbt element consists of many arranged structures called cells. Many designers view igbt as a device with mos input characteristics and bipolar output characteristic that is a voltagecontrolled bipolar device. Agileswitch plugandplay drivers are packaged as complete be directly connected to igbt modules for instant use. Fuji, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors. Reduces power dissipation to contribute to energy saving. Fuji power semiconductors igbtsic devices selection guide. Fuji electric has also advanced the miniaturization of surface structure that is imperative to improve the characteristics of igbt. Igbt modules igbt inverter semiconductors fuji electric. Agileswitch drivers are ideally suited to work with fuji high voltage igbt. The punchthrough igbt used the epitaxial wafer and the carriers were highinjected from the collector side to obtain the low on state voltage. Fuji igbt modules application manual fuji electric. In particular, the fuji electric xseries dual xt module is the.
The applied igbt and fwd chips reduce the module loss by using fuji electrics seventhgeneration chip technology and reverseconductance igbt technology, resulting in a reduction in the overall module dimension of the igbt. In general the more the igbt cells are provided, the lower the onstate voltage will be. Many designers view igbt as a device with mos input. Fuji electric 7thgeneration x series dual xt igbt modules combine improved electrical and thermal performance to deliver a 1200v800a rating in a 150mm x 62mm package. By continuing to use the website, you agree to the usage of cookies. Fuji electric igbt power transistor modules and power. Fuji electric provides 3level igbt modules in two different topologies. Yet, fuji electric had to work out an igbt that withstood voltages as high as 1200v and that was as thin as one hundred and several tens of microns to achieve characteristics superior to those of an epitaxial waferbased igbt. The insulatedgate bipolar transistor igbt offers low conduction loss and. Fuji electric igbt modules applications pv, ups, wind 3level module standard 2pack hpm nc, servo ipm smallipm motor drive smallpim pim, 6pack standard 2pack traction standard 2pack primepacktm hpm. The insulated gate bipolar transistor igbt is a minoritycarrier device with high input impedance and large bipolar currentcarrying capability. Fuji electric offers an extensive lineup of igbt modules. Fuji power semiconductors igbt sic devices selection guide 25a2j0005a.
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